Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures

Michael J. Hayduk; Mark F. Krol; Clifford R. Pollock

doi:10.1117/12.243088

14 June 1996 Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures

Michael J. Hayduk, Mark F. Krol, Clifford R. Pollock

Proceedings Volume 2749, Photonic Component Engineering and Applications; (1996) https://doi.org/10.1117/12.243088
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

We present the results of an experimental investigation of field-dependent space-charge build-up in (Ga,In)As/(Al,In)As asymmetric double quantum well structures. By using low- temperature photoluminescence spectroscopy, we have found that charge separation dramatically increases the magnitude of the applied field required to achieve resonance (and beyond) of the lowest allowed electron levels in the narrow and wide wells.

Citation Download Citation

Michael J. Hayduk, Mark F. Krol, and Clifford R. Pollock "Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures", Proc. SPIE 2749, Photonic Component Engineering and Applications, (14 June 1996); https://doi.org/10.1117/12.243088

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