Digital analysis of photo-induced current transients in semi-insulating GaAs and InP

Pawel Kaminski; Michal Pawlowski; Robert Cwirko; M. Palczewska; Roman Kozlowski

doi:10.1117/12.238140

8 April 1996 Digital analysis of photo-induced current transients in semi-insulating GaAs and InP

Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman Kozlowski

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238140
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

Digital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.

Citation Download Citation

Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, and Roman Kozlowski "Digital analysis of photo-induced current transients in semi-insulating GaAs and InP", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238140

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