Time-response analysis of GaInAs MSM photodiode structures

S. V. Averin; Remy Sachot; J. Hugi; Marc P. de Fays; Marc Ilegems

doi:10.1117/12.239863

6 May 1996 Time-response analysis of GaInAs MSM photodiode structures

S. V. Averin, Remy Sachot, J. Hugi, Marc P. de Fays, Marc Ilegems

Proceedings Volume 2799, Atomic and Quantum Optics: High-Precision Measurements; (1996) https://doi.org/10.1117/12.239863
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation

Abstract

One of the main challenges in the development of the MSM PD (metal-semiconductor-metal photodiode) structures is to obtain a short impulse response. The time-dependent behavior can be best studied in terms of device simulations. We analyze the performances of GaInAs interdigital MSM PD structures by simulating the electron and hole movement with a two- dimensional self-consistent time-dependent technique. The model provides a clear understanding of high-speed dynamic processes in structures with micron and submicron spacing. Several ways of improving the high-speed impulse response of GaInAs MSM PD are proposed.

Citation Download Citation

S. V. Averin, Remy Sachot, J. Hugi, Marc P. de Fays, and Marc Ilegems "Time-response analysis of GaInAs MSM photodiode structures", Proc. SPIE 2799, Atomic and Quantum Optics: High-Precision Measurements, (6 May 1996); https://doi.org/10.1117/12.239863

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