Scalability of conventional and sidewall-sealed LOCOS technology for 256-Mbit DRAM array and periphery isolation

Mark Rodder; Jeong-Mo Hwang; Ih-Chin Chen

doi:10.1117/12.250870

13 September 1996 Scalability of conventional and sidewall-sealed LOCOS technology for 256-Mbit DRAM array and periphery isolation

Mark Rodder, Jeong-Mo Hwang, Ih-Chin Chen

Author Affiliations +

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250870
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

LOCOS technology is being investigated for applicability to 256 Mbit DRAM applications in the memory array (with active region pitch < 0.6 micrometers ) as well as the periphery. In this paper, LOCOS isolation is demonstrated for array n^--n^- spacing < 0.2 micrometers for 256 Mbit DRAM array and for n⁺-n⁺ (and p⁺-p⁺) spacing < 0.35 micrometers for DRAM periphery. Array nMOSFETs with small active width of 0.2 micrometers are demonstrated with I_off < lfA/micrometers (V_B equals IV) at L_o equals 0.2 micrometers while maintaining low V_T (<V_T^spec equals 1.5 V at V_B equals 4 V) at L_o equals 0.3 micrometers in accordance with DRAM pass transistor design. These key results are obtained with appropriate LDD dose and energy, sidewall sealed LOCOS isolation, and 1100 degree(s)C field oxidation to reduce both field oxide thinning and active width encroachment. MOSFETs with sidewall sealed LOCOS show small narrow width effect, (Delta) V_T/(Delta) W, and no sub-V_T `double-hump'. In contrast, conventional LOCOS results in high (Delta) V_T/(Delta) W for MOSFETs with active width < 0.4 micrometers while recessed LOCOS causes sub- V_T `double-hump' for large active width MOSFETs.

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Mark Rodder, Jeong-Mo Hwang, and Ih-Chin Chen "Scalability of conventional and sidewall-sealed LOCOS technology for 256-Mbit DRAM array and periphery isolation", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250870

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