Collective fabrication of gallium-arsenide-based microsystems

Jean Michel Karam; Bernard Courtois; M. Holjo; Jean Louis Leclercq; Pierre Viktorovitch

doi:10.1117/12.251219

23 September 1996 Collective fabrication of gallium-arsenide-based microsystems

Jean Michel Karam, Bernard Courtois, M. Holjo, Jean Louis Leclercq, Pierre Viktorovitch

Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251219
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

GaAs is for many people regarded as being too difficult and expensive for a sensor or actuator application. It is a fact that GaAs is not cheap in comparison with silicon and also cannot currently be produced with as high purity and few crystalline defects as Si. Therefore, it is preferable to use GaAs where and when one can take advantage of the good properties that it possesses. Possible applications could be where high working-temperature, high frequency, integrated optoelectronics or piezoelectricity are demanded. As for silicon, gallium arsenide based microsystems should be manufactured on industrial production lines, with an additional post-processing for microsystem specific structures. Thus, using the same approach applied to silicon, CMP investigates gallium arsenide micromachining techniques using the Philips Microwave Limeil HEMT and the Vitesse MESFET foundry processes. This paper treats the advantages and disadvantages of gallium arsenide as a micromechanical material in comparison with silicon and quartz. The MESFET and HEMT compatible micromachining will also be detailed.

Citation Download Citation

Jean Michel Karam, Bernard Courtois, M. Holjo, Jean Louis Leclercq, and Pierre Viktorovitch "Collective fabrication of gallium-arsenide-based microsystems", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251219

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