Evaluation of a fast and flexible OPC package: OPTISSIMO

Wilhelm Maurer; Thomas Waas; Hans Eisenmann

doi:10.1117/12.262826

27 December 1996 Evaluation of a fast and flexible OPC package: OPTISSIMO

Wilhelm Maurer, Thomas Waas, Hans Eisenmann

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262826
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

It is out of question, that current state-of-the-art lithography--printing 350 nm structures with i-line tools or 250 nm structures with DUV tools--needs to correct for proximity effects (OPC). Otherwise, all the well-known effects like line-end shortening, linewidth variation as a function of adjacent patterns, linewidth non-linearity, etc. will produce a pattern, that is significantly different from the intended design. In this paper, we report first evaluation results of OPTISSIMO, a software package for automatic proximity correction. Besides the ability to handle full-chip designs by preserving as much as possible of the original data-hierarchy, there are significant options for the user. A large number of choices can be made to balance between the precision of the correction and the complexity of the corrected design. The main target of our evaluations was to check for full-chip OPC for the gate level of a state-of-the-art design. This corresponds to print either linewidths in the 350 nm to 400 nm range with i-line lithography or 250 nm/300 nm linewidth with DUV lithography. Taking 400 nm i-line lithography as an example, 3% precision OPC which has been demonstrated. By using hierarchical data handling, it was shown, that even the data complexity of a 256 M DRAM can be managed within reasonable time.

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Wilhelm Maurer, Thomas Waas, and Hans Eisenmann "Evaluation of a fast and flexible OPC package: OPTISSIMO", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262826

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