Subhalf-micron mask defect detectability and printability at 1X reticle magnification

Dan L. Schurz; Warren W. Flack; Gary Newman

doi:10.1117/12.262801

27 December 1996 Subhalf-micron mask defect detectability and printability at 1X reticle magnification

Dan L. Schurz, Warren W. Flack, Gary Newman

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262801
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

There have been several studies on the printability of subhalf-micron defects using reduction steppers. These studies typically involved 1X reticles with defect sizes greater than 0.3 micrometers . Because submicron 1X projection systems are being incorporated into numerous fabrication lines, there is a clear need to determine the impact of subhalf-micron defects using these systems. This paper examines defect detection and measurement capability on 1X reticles and the printability of those defects on production submicron 1X steppers. This analysis will enhance the understanding of the relationship between defect size and 1X projection optics and allows for determination of optimal defect specifications. A test reticle representative of a 64 Mb DRAM metal layer was manufactured with a programmed series of attached and isolated defects ranging from 0.15 to 0.5 micrometers . Both clear and opaque polarity defects were designed. The defects were identified and measured on two different reticle autoinspection systems. The performance of the two systems was compared to the reticle database to evaluate capture rates and efficiency. Actual reticle defect sizes were measured using low voltage SEM metrology. Defect printability was determined using a 1X i-line projection stepper with focus and exposure optimized for nominal critical dimensions (CD). The defects that printed on the wafer were measured and compared to the defects measured on the reticle. The effects of varying wafer exposure dose and focus within a 10 percent CD process window on defect printability were also evaluated. The results of the mask inspection comparison and the reticle versus wafer defect maps are compared.

Citation Download Citation

Dan L. Schurz, Warren W. Flack, and Gary Newman "Subhalf-micron mask defect detectability and printability at 1X reticle magnification", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262801

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
18 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Reticles

Semiconducting wafers

Computer aided design

Inspection

Opacity

Lithography

Manufacturing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years