Paper
24 September 1996 Far-field control of vertical cavity surface emitting lasers
Yi-Guang Zhao, Y.-S. Zhang, X.-L. Huang, W.-X. Chen, L.-F. Cong, C.-Z. Jin, S.-M. Lin, X.-W. Hu, Wei Wang
Author Affiliations +
Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251889
Event: Photonics China '96, 1996, Beijing, China
Abstract
The far-field control of vertical-cavity surface-emitting lasers (VCSELs) has been studied experimentally and theoretically. The experimental results show that the window and the gain-guided area radiuses of VCSELs strongly influence laser far-field distributions and beam characteristics; for VCSELs with small window radius w equals 2.5 micrometers , only one dominant lobe has been observed in the far-field profiles, even though injected current was increased up to 2 Ith; and the smaller the ratio of the window radius to the gain-guided area radius, the larger is the far-field divergence. To understand the experimental results, we have also performed a calculation using a method of finding self-consistent solutions for the carrier diffusion and the optical field equations. The calculated results are in good agreement with those of the experiments.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Guang Zhao, Y.-S. Zhang, X.-L. Huang, W.-X. Chen, L.-F. Cong, C.-Z. Jin, S.-M. Lin, X.-W. Hu, and Wei Wang "Far-field control of vertical cavity surface emitting lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251889
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KEYWORDS
Vertical cavity surface emitting lasers

Near field

Diffusion

Near field optics

Protactinium

Semiconductor lasers

Refractive index

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