LPE growth of high-power InGaAsP/GaAs SCH SQW lasers

Baoxue Bo; Baoshun Zhang; Baoren Zhu; Zonghe Yang; Dacui Ren; Xingde Zhang

doi:10.1117/12.251908

24 September 1996 LPE growth of high-power InGaAsP/GaAs SCH SQW lasers

Baoxue Bo, Baoshun Zhang, Baoren Zhu, Zonghe Yang, Dacui Ren, Xingde Zhang

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251908
Event: Photonics China '96, 1996, Beijing, China

Abstract

A modified liquid phase epitaxy method was used to grow InGaAsP/GaAs SCH SQW multilayer structures for the diode lasers emitting at 0.81 micrometers . In order to prevent the phosphorus evaporation from source melts, the epitaxy process was carried out at the temperature as low as 750 degrees C. The lowest threshold current density I_th was 300A/cm², the very high value of the total differential quantum efficiency obtained from long-cavity diodes exceeded 80 percent, the highest CW optical power obtained without any coatings was 2.1W.

Citation Download Citation

Baoxue Bo, Baoshun Zhang, Baoren Zhu, Zonghe Yang, Dacui Ren, and Xingde Zhang "LPE growth of high-power InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251908

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