Filamentation in high-power tapered semiconductor amplifiers

David J. Bossert; Gregory C. Dente; Michael L. Tilton

doi:10.1117/12.273817

2 May 1997 Filamentation in high-power tapered semiconductor amplifiers

David J. Bossert, Gregory C. Dente, Michael L. Tilton

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273817
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Filament formation is currently a limiting factor in the development of high power, spatially coherent semiconductor amplifiers. An experimental and theoretical investigation has been conducted to examine the filamentation tendencies of tapered amplifier structures. Experimental measurements of the far-field intensity distribution of a tapered amplifier which has been intentionally `seeded' to filament are compared to a perturbative solution of the paraxial wave equation. This model is used to address several design issues which can be optimized to suppress filamentation. The effect of non-uniform carrier injection due to carrier- induced bandgap changes is also investigated numerically.

Citation Download Citation

David J. Bossert, Gregory C. Dente, and Michael L. Tilton "Filamentation in high-power tapered semiconductor amplifiers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273817

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