Paper
4 April 1997 Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE
Hans De Neve, Johan Blondelle, Peter Van Daele, Piet M. A. Demeester, Roel G. Baets, Gustaaf Borghs
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Abstract
The external QE of microcavity light emitting diodes strongly depends on the device size and operational current density. Our experiments reveal that spectral broadening of the optical spectrum emitted by the three InGaAs QWs as well as photon originally emitted into the guided mode of the cavity can explain these differences. An optimized microcavity layer design yields external QEs of 20 percent for substrate emitting light emitting diodes with diameters of 1.5 mm.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans De Neve, Johan Blondelle, Peter Van Daele, Piet M. A. Demeester, Roel G. Baets, and Gustaaf Borghs "Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); https://doi.org/10.1117/12.271047
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Cited by 12 scholarly publications.
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KEYWORDS
Quantum efficiency

Light emitting diodes

Optical microcavities

Quantum wells

Indium gallium arsenide

Epoxies

GRIN lenses

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