Paper
4 April 1997 Electrical and optical losses in dielectrically apertured vertical-cavity lasers
Brian Thibeault, Eric R. Hegblom, Yuliya A. Akulova, Jack Ko, Ryan L. Naone, Larry A. Coldren, Philip D. Floyd
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Abstract
In this paper, we measure the size dependent optical scattering and electrical losses in etched-post and dielectrically apertured vertical-cavity lasers (VCLs). We show that reduced optical scattering losses are responsible for the dramatic improvement in device scaling seen with the use of the oxide-defined apertures. Furthermore, we experimentally show how to reduce this optical scattering loss through the use of thin apertures. We find that the electrical losses (due to current leakage around the active region and carrier diffusion in the active region) in the structures are minimized by reducing the doping near the active region, minimizing the current leakage. Finally, based on the experimental results, theoretical design curves for VCL scaling are calculated.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Thibeault, Eric R. Hegblom, Yuliya A. Akulova, Jack Ko, Ryan L. Naone, Larry A. Coldren, and Philip D. Floyd "Electrical and optical losses in dielectrically apertured vertical-cavity lasers", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271055
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum wells

Scattering

Diffusion

Etching

Dielectrics

Oxides

Lithium

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