Ferroelectric PbZr1-xTixO3 thin films made by various metalorganic chemical vapor deposition techniques

Tingkai Li; Peter A. Zawadzki; Richard A. Stall; William J. Kroll

doi:10.1117/12.271435

11 April 1997 Ferroelectric PbZr_1-xTi_xO₃ thin films made by various metalorganic chemical vapor deposition techniques

Tingkai Li, Peter A. Zawadzki, Richard A. Stall, William J. Kroll

Proceedings Volume 3008, Miniaturized Systems with Micro-Optics and Micromechanics II; (1997) https://doi.org/10.1117/12.271435
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Ferroelectric films of PbZr_1-xT1_xO₃ (PZT) have been prepared by various MOCVD techniques including bubbler, direct liquid injection, plasma enhanced MOCVD and TurboDisc techniques. The titanium tetraisopropoxide was used as the precursor for titanium source, while lead bis- tetramethylheptadione, zirconium tetrak1s- tetramethylheptadione were used as sources for lead and zirconium respectively. The PZT films were deposited onto Pt/T1/S1O₂/S1 wafers and single-crystal sapphire substrates to measure their phase formation, microstructure and ferroelectric properties. It was found that nucleation of PZT perovskite phase started at a deposition temperature over 550 degrees C and grain growth dominated at 650 degrees C or above. The grain size of PbZr₀₅T1₀₅O₃ thin films increased from 0.04 micrometers to 0.3 micrometers with increasing deposition temperature. The microstructure of the films was found to be dense and homogeneous. The PZT thin films made by MOCVD exhibit excellent ferroelectric properties. Typically the 300 nm thick PZT films with grain size about 0.3 micrometers on Pt electrodes have P_r greater than 20-30 (mu) C/cm² at 5V, dielectric constant around 1000, low coercive field E_c50-70 kV/cm, low fatigue rate and leakage current 2-6 X 10^-7 A/cm² at 150 kV/cm and room temperature. The microstructure and ferroelectric properties of PZT thin films made by various MOCVD techniques were also investigated.

Citation Download Citation

Tingkai Li, Peter A. Zawadzki, Richard A. Stall, and William J. Kroll "Ferroelectric PbZr_1-xTi_xO₃ thin films made by various metalorganic chemical vapor deposition techniques", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); https://doi.org/10.1117/12.271435

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