Temperature-dependent hole and electron mobility of CMOS devices

Wei-Lee Lu; Gwo-Chern Jiang; Kun-Fu Tseng; Ting-Hwan Chang; Zen-Wen Hwang; Luke Su Lu

doi:10.1117/12.280316

13 August 1997 Temperature-dependent hole and electron mobility of CMOS devices

Wei-Lee Lu, Gwo-Chern Jiang, Kun-Fu Tseng, Ting-Hwan Chang, Zen-Wen Hwang, Luke Su Lu

Proceedings Volume 3061, Infrared Technology and Applications XXIII; (1997) https://doi.org/10.1117/12.280316
Event: AeroSense '97, 1997, Orlando, FL, United States

Abstract

Temperature variable Hall measurement system has been setup to measurement both the carrier mobility and the carrier concentration for the CMOS devices. The measured Hall mobility show a little bit higher value than the conductance mobility. The measured carrier concentration at low gate bias region show a reverse trend as expected, and this may be due to the error in the estimation of the channel depth of the CMOS devices. In general, care has to be taken to the measurement procedure to ensure the accuracy of the Hall voltage.

Citation Download Citation

Wei-Lee Lu, Gwo-Chern Jiang, Kun-Fu Tseng, Ting-Hwan Chang, Zen-Wen Hwang, and Luke Su Lu "Temperature-dependent hole and electron mobility of CMOS devices", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); https://doi.org/10.1117/12.280316

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