Mask bias effects in e-beam cell projection lithography

Takahiro Ema; Hiroshi Yamashita; Ken Nakajima; Hiroshi Nozue

doi:10.1117/12.277276

28 July 1997 Mask bias effects in e-beam cell projection lithography

Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, Hiroshi Nozue

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277276
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

We newly developed the mask bias method in electron beam (EB) cell projection lithography to improve the resolution and to increase the throughput. In this method, the open slits of EB mask are shrunk to reduce the ratio of open area in EB mask. This shrinkage decreases the Coulomb interaction effect and the proximity effect. This results that 0.14 micrometer L/S pattern can be resolved even at the maximum shot size (25 micrometer²) and so the writing time of 0.14 micrometer L/S pattern can be reduced by half.

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Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, and Hiroshi Nozue "Mask bias effects in e-beam cell projection lithography", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277276

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KEYWORDS

Photomasks

Lithium

Projection lithography

Electron beam lithography

Electron beams

Semiconducting wafers

Dry etching

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