Proposal for pattern layout rule in application of alternating phase-shift mask

Akihiro Nakae; Shuji Nakao; Yasuji Matsui

doi:10.1117/12.277281

28 July 1997 Proposal for pattern layout rule in application of alternating phase-shift mask

Akihiro Nakae, Shuji Nakao, Yasuji Matsui

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277281
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

An important pattern layout rule in application of alternating phase shift mask (PSM) is proposed. The images of semi- randomly aligned patterns show poor characteristics in defocus and mask fidelity. For an example, lines and spaces patterns with uniform bright and non-uniform dark widths showed significantly large CD variation with defocus. And lines and spaces patterns with uniform dark and non-uniform bright widths showed completely asymmetrical CD-focus characteristics. It has been revealed by the comparison between experimental data and the simulated results that the asymmetrical characteristics are caused by the spherical aberration in projection optics.

Citation Download Citation

Akihiro Nakae, Shuji Nakao, and Yasuji Matsui "Proposal for pattern layout rule in application of alternating phase-shift mask", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277281

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