Paper
7 July 1997 Optical characterization of the internal electric field distribution under bias of CdZnTe radiation detectors
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Abstract
Polarized transmission optical profiles were used to characterize the CdZnTe (CZT) room-temperature radiation detectors. The internal electric field distributions of the CZT detectors under bias were probed by a 952 nm illumination between two crossed Glan-Taylor polarizers. A 16-bit digital charge coupled device (CCD) was employed as an image sensor. The 2-dimensional (2D) images reflecting the internal electrical field intensity changes were obtained utilizing the Pockels electro-optic effect. CZT detectors of crystal sizes of 5 by 5 by 5 mm were investigated under different bias voltages. Uniform and nonuniform internal electric field distributions throughout the detector volumes, under different light illumination conditions, were observed and analyzed. A theoretical model of the semiconductor energy band structure under the bias was established and used to understand the measurement results.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Walter Yao, Richard J. M. Anderson, and Ralph B. James "Optical characterization of the internal electric field distribution under bias of CdZnTe radiation detectors", Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); https://doi.org/10.1117/12.277705
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Cited by 35 scholarly publications.
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KEYWORDS
Sensors

Electric field sensors

Crystals

Electro optics

Electro optical modeling

Charge-coupled devices

Polarizers

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