Supercooling vs overheating in the III-V semiconductor compound InSb: an abrupt-discontinuous relationship

David T. Hsu; Hua Yu Tong; Frank G. Shi

doi:10.1117/12.277710

7 July 1997 Supercooling vs overheating in the III-V semiconductor compound InSb: an abrupt-discontinuous relationship

David T. Hsu, Hua Yu Tong, Frank G. Shi

Proceedings Volume 3123, Materials Research in Low Gravity; (1997) https://doi.org/10.1117/12.277710
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

The dependence of supercooling level ((Delta) T^-) of InSb melt preceding on its melt overheating ((Delta) T⁺) above the equilibrium melting temperature, is investigated for the first time on a III-V semiconductor compound. The dependence of (Delta) T^- on (Delta) T⁺ in the InSb melt is shown to be abrupt-and-discontinuous. The observation can be linked to the semiconductor-metal transition upon melting, and is probably general, occurring also for other III-V and group IV semiconductors.

Citation Download Citation

David T. Hsu, Hua Yu Tong, and Frank G. Shi "Supercooling vs overheating in the III-V semiconductor compound InSb: an abrupt-discontinuous relationship", Proc. SPIE 3123, Materials Research in Low Gravity, (7 July 1997); https://doi.org/10.1117/12.277710

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