Mechanical properties of dielectric thin films

Herve Rigneault; Christine Mahodaux; Hugues Giovannini; Ludovic Escoubas; Paul Moretti

doi:10.1117/12.290191

1 October 1997 Mechanical properties of dielectric thin films

Herve Rigneault, Christine Mahodaux, Hugues Giovannini, Ludovic Escoubas, Paul Moretti

Proceedings Volume 3133, Optical Thin Films V: New Developments; (1997) https://doi.org/10.1117/12.290191
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Stress in thin films deposited by Reactive Low-Voltage Ion Plating is studied in air and at room temperature. A multilayer stack, composed of tantalum pentoxide and silicon dioxide layers, is considered and the interactions layer to layer turn out to have no effect as regards to the final bending. Evolution in stress after annealing shows the possibility to reduce the stress as well as the absorption for tantalum pentoxide thin films. Finally, ion implementation, such as helium and xenon, at high energy, prove to be also a way to vary and diminish the stress in thin films.

Citation Download Citation

Herve Rigneault, Christine Mahodaux, Hugues Giovannini, Ludovic Escoubas, and Paul Moretti "Mechanical properties of dielectric thin films", Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); https://doi.org/10.1117/12.290191

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