Determination of recombination cross section for free electron in n-CuInS2

D. Cybulski; A. Opanowicz

doi:10.1117/12.276243

13 June 1997 Determination of recombination cross section for free electron in n-CuInS2

D. Cybulski, A. Opanowicz

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276243
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

The steady-state photoconductivity and photoconductivity decay have been measured from T equals 90 K to 310 K in n- CuInS₂ crystals. At high light intensities the dependence of photoconductivity ((Delta) (sigma) ) on excitation strength (L) is expressed by the relation (Delta) (sigma) approximately L^0.5. In this excitation strength range the decay of photoconductivity with time (t) can be described by the law (Delta) (sigma) (t) approximately (1 + Ct)^-1, where the constant C is proportional to the cross-section (S) for recombination of photoexcited free electron. From the (Delta) (sigma) (t) dependence the value of the cross-section was determined. The cross-section depends on the temperature according to the relation S approximately T^-1.

Citation Download Citation

D. Cybulski and A. Opanowicz "Determination of recombination cross section for free electron in n-CuInS2", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276243

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