InAsSb heterojunction photodiodes grown by liquid phase epitaxy

Jaroslaw Rutkowski; Jolanta Raczynska; Antoni Rogalski; Krzysztof Adamiec; Waldemar Larkowski

doi:10.1117/12.276232

13 June 1997 InAsSb heterojunction photodiodes grown by liquid phase epitaxy

Jaroslaw Rutkowski, Jolanta Raczynska, Antoni Rogalski, Krzysztof Adamiec, Waldemar Larkowski

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276232
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

In this paper, the growth of p-n InAsSb/InSb heterojunction using liquid phase epitaxy (LPE) has been discussed. The layers have been grown on B InSb substrate using an In-rich solution in horizontal slider type boat. The active InAsSb layer was first grown with a desired composition. The carrier concentrations in the top layer in the range 10¹⁶ cm^-3 to 10²⁰ cm^-3 was easily controlled using Cd doping. The standard structure consisted of 100 micrometers heavily doped n-type InSb substrate, an 10 micrometers InAsSb active region, and 2 micrometers heavily doped InSb p-type cap layer. Mirror like surface morphology was observed using a Nomarski differential interference contrast microscope. The structural characterization and the composition of InAsSb have been determined from x-ray diffraction data and IR transmission characteristic. The technology and construction of mesa photodiodes, both backside and frontside illuminated, have been presented. The analyses of the R₀A product and current-voltage characteristics as a function of temperature shows that the dark currents of InSb/InSb photodiodes are diffusion limited. At higher As composition the R₀A product is affected by the generation-recombination current of the depletion region.

Citation Download Citation

Jaroslaw Rutkowski, Jolanta Raczynska, Antoni Rogalski, Krzysztof Adamiec, and Waldemar Larkowski "InAsSb heterojunction photodiodes grown by liquid phase epitaxy", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276232

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