Investigation of MIS-structures on MnxHg1-xTe

O. G. Lanskaya; E. P. Lilenko; Aleksander V. Voitsekhovskii; V. I. Kalenik

doi:10.1117/12.280412

26 August 1997 Investigation of MIS-structures on Mn_xHg_1-xTe

O. G. Lanskaya, E. P. Lilenko, Aleksander V. Voitsekhovskii, V. I. Kalenik

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280412
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

We inform on results C-V measurements of structures metal- insulator MnHgTe, in which interface insulator-MnHgTe is created anodic oxidation. Results of researchers of a structure of distribution of elements of a matrix on interface by a method Rutherford backscattering spectrometry are submitted. Interrelation between the characteristics of interface and C-V characteristics is shown. MIS-structures on MMT as with anodic oxide and with oxinitrid silicon deposition after removal anodic oxide. A nature of defects of a transient layer between oxide and MMT is discussed which requires further research. Passivation MMT by deposition Si_xO_yN_z allows to reach rather low concentration surface charge, that on the order is lower, than with anodic oxide.

Citation Download Citation

O. G. Lanskaya, E. P. Lilenko, Aleksander V. Voitsekhovskii, and V. I. Kalenik "Investigation of MIS-structures on Mn_xHg_1-xTe", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280412

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