Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector

Zhenghao Chen; Zhenyu Yuan; Jianwei Ma; Dafu Cui

doi:10.1117/12.280469

26 August 1997 Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector

Zhenghao Chen, Zhenyu Yuan, Jianwei Ma, Dafu Cui

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280469
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.

Citation Download Citation

Zhenghao Chen, Zhenyu Yuan, Jianwei Ma, and Dafu Cui "Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280469

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