THz generation from photoconductive switches fabricated by using an atomic force microscope

Taro Itatani; Tadashi Nakagawa

doi:10.1117/12.312338

8 July 1998 THz generation from photoconductive switches fabricated by using an atomic force microscope

Taro Itatani, Tadashi Nakagawa

Proceedings Volume 3269, Commercial Applications of Ultrafast Lasers; (1998) https://doi.org/10.1117/12.312338
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We have proposed and realized a structure of insulator-gap photoconductive switches by using an atomic force microscope (AFM). The insulator-gap structure prevents discharge in a photoconductive gap, to realize strong electric field in photo-absorbing region. We have made photoconductive switches with a gap of 43 nm and 100 nm. We also made multiple gap structures to reduce dark current. Ultrafast response for transmission modes have been estimated by the electro-optic (EO) sampling which can measure vector components of electric field. The radiation modes from the photoconductive switches with antenna structures have been measured by a Fourier transform polarizing interferometer.

Citation Download Citation

Taro Itatani and Tadashi Nakagawa "THz generation from photoconductive switches fabricated by using an atomic force microscope", Proc. SPIE 3269, Commercial Applications of Ultrafast Lasers, (8 July 1998); https://doi.org/10.1117/12.312338

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