Paper
3 June 1998 Properties of liquid crystal thin films grown by pulsed-laser deposition
Jose A. Gonzalo de los Reyes, Dan A. Allwood, Peter E. Dyer, Michael Hird
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Abstract
Thin films of 4-cyano-4'-pentylbiphenyl (5CB) and E7 liquid crystals have been fabricated by pulsed laser deposition. The suitability of different lasers (ArF, KrF, XeCl and CO2) has been investigated over a range of fluence using visible-UV and infrared absorption and optical polarizing microscopy to characterize the films. High performance liquid chromatography and matrix assisted laser desorption ionization mass spectroscopy were used to assess the extent of decomposition of the films. The high photon energy of ArF and KrF excimer lasers produce severe and partial decomposition of the deposited films respectively, whilst films deposited using the CO2 laser also present partial degradation, most likely related to thermal processes during the laser-target interaction. Films with near identical structure to that of the starting LC target and good textures were obtained by XeCl laser deposition up to fluences of 130 mJ/cm2.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose A. Gonzalo de los Reyes, Dan A. Allwood, Peter E. Dyer, and Michael Hird "Properties of liquid crystal thin films grown by pulsed-laser deposition", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); https://doi.org/10.1117/12.309521
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KEYWORDS
Carbon dioxide lasers

Liquid crystals

Thin films

Absorption

Molecules

Gas lasers

Excimer lasers

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