Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data

Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos

doi:10.1117/12.304403

1 April 1998 Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data

Xinhui Niu, Nickhil H. Jakatdar, Costas J. Spanos

Author Affiliations +

Proceedings Volume 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II; (1998) https://doi.org/10.1117/12.304403
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

New metrology for characterizing the chemically amplified resist is required to meet the stringent demands of DUV lithography. In this paper, we present a systematic methodology to characterize DUV photoresist by decomposing the resist thin-film into different empirical components according to their optical properties. The innovation of this metrology includes three parts: ellipsometry and reflectometry measurement data de-noising; sophisticated dispersion models derived from the Kramers-Kronig relations for optical thin-film component description; and an intelligent simulated annealing algorithm for the optimization computational engine.

Citation Download Citation

Xinhui Niu, Nickhil H. Jakatdar, and Costas J. Spanos "Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data", Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); https://doi.org/10.1117/12.304403

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