Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup AlxGa1-xAs/GaInP2 heterostructures

Yong-Hoon Cho; Jin-Joo Song; Dongsik Kim; HeeWoong Lim; Byung-Doo Choe

doi:10.1117/12.306147

23 April 1998 Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup Al_xGa_1-xAs/GaInP₂ heterostructures

Yong-Hoon Cho, Jin-Joo Song, Dongsik Kim, HeeWoong Lim, Byung-Doo Choe

Author Affiliations +

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306147
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report anti-Stokes photoluminescence (ASPL) phenomena for Al_xGa_1-xAs/GaInP₂ heterostructures with a staggered (type-II) band lineup. The ASPL properties were investigated by PL, PL excitation, and time-resolved PL spectroscopy. We found that the ASPL could appear in both the GaInP-2) and Al_xGa_1-xAs layers adjacent to the type- II heterojunction when the excitation photon energy is higher than the interface-related, below-bandgap (BBG) luminescence energy. From the excitation intensity dependent PL measurements, we found that the GaInP₂ ASPL intensity exhibits a nearly linear dependence on the excitation intensity. Time-resolved PL measurements were performed for the excitation energy between the bandgaps of GaInP₂ and Al_xGa_1-xAs, as well as above the bandgap of the GaInP₂ layer. The GaInP₂ ASPL decay time of more than 100 ns was found to follow closely the decay of the BBG luminescence, whereas for excitation above the GaInP₂ bandgap, the GaInP₂ luminescence decays very rapidly (less than 1 ns). From these results, we propose that the energy up- conversion for the ASPL is via a two-step two-photon absorption process involving localized, long-lived carries near the interface.

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Yong-Hoon Cho, Jin-Joo Song, Dongsik Kim, HeeWoong Lim, and Byung-Doo Choe "Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup Al_xGa_1-xAs/GaInP₂ heterostructures", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306147

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