Coherence properties of semiconductor nanostructures

Roland Levy; Bernd Hoenerlage; Pierre Gilliot

doi:10.1117/12.306173

23 April 1998 Coherence properties of semiconductor nanostructures

Roland Levy, Bernd Hoenerlage, Pierre Gilliot

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306173
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We study the coherence times of CuBr nanocrystals (quantum dots) in a borosilicate matrix under resonant excitation. Measurements are performed in two different experiments: Degenerate four-wave mixing with pulses of approximately 100 fs duration and spectral hole burning using a nanosecond excitation. Our results show a dependence of the dephasing times on the excitation intensity, and, when extrapolated to low intensity, a longer coherence time under fs than ns excitation. This result is tentatively explained as being due to spectral diffusion in the case of ns excitation.

Citation Download Citation

Roland Levy, Bernd Hoenerlage, and Pierre Gilliot "Coherence properties of semiconductor nanostructures", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306173

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