Monte Carlo simulation of the effects of X6 and X7 intervalley scattering on the ultrafast relaxation of photoexcited carriers in GaAs

Mohamed A. Osman

doi:10.1117/12.306146

23 April 1998 Monte Carlo simulation of the effects of X6 and X7 intervalley scattering on the ultrafast relaxation of photoexcited carriers in GaAs

Mohamed A. Osman

Author Affiliations +

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306146
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The effects of X6 and X7 intervalley scattering on the energy relaxation of electrons in GaAs were investigated in GaAs for excitation energy of 4.3 eV. An initial build up of electron population in the upper valleys (X6 and X7) following the excitation leads to non-equilibrium LO phonon. The initial LO phonon spectrums in different valleys show maximum build up at different q vectors and then relax to similar distributions at longer times. The Heating of the LO phonons leads to slower transfer of electrons back to the central valleys.

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Mohamed A. Osman "Monte Carlo simulation of the effects of X6 and X7 intervalley scattering on the ultrafast relaxation of photoexcited carriers in GaAs", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306146

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