Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

Eric D. Grann; Kong-Thon F. Tsen; David K. Ferry; Arnel A. Salvador; Andrei Botchkarev; Hadis Morkoc

doi:10.1117/12.306167

23 April 1998 Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

Eric D. Grann, Kong-Thon F. Tsen, David K. Ferry, Arnel A. Salvador, Andrei Botchkarev, Hadis Morkoc

Author Affiliations +

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306167
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resoled Raman spectroscopy at T equals 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n approximately equals 10¹⁷ cm^-3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.

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Eric D. Grann, Kong-Thon F. Tsen, David K. Ferry, Arnel A. Salvador, Andrei Botchkarev, and Hadis Morkoc "Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306167

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