Paper
23 April 1998 Wigner function and density matrices and their application to transport properties of semiconductor devices
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Abstract
The transient behavior of semiconductor devices within the framework of density operators, the density matrix and the quantum hydrodynamic moment equations are reviewed. A capacitive-inductive transition, near 4 THz for two terminal double barrier structures within the framework of the quantum hydrodynamic equations is discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold L. Grubin "Wigner function and density matrices and their application to transport properties of semiconductor devices", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306157
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KEYWORDS
Semiconductors

Matrices

Physics

Terahertz radiation

Motion models

Scattering

Nanostructures

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