1.3-um InAsP/InAlGaAs MQW lasers for high-temperature operation

Takayoshi Anan; Mitsuki Yamada; Keiichi Tokutome; Shigeo Sugou

doi:10.1117/12.304441

7 April 1998 1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operation

Takayoshi Anan, Mitsuki Yamada, Keiichi Tokutome, Shigeo Sugou

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304441
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

High quality strained InAsP was grown using gas-source molecular-beam-epitaxy (GSMBE) and the band structure was determined. The conduction band discontinuity ratio of InAsP/InP heterostructure was about 0.35, contrary to the reported value of 0.75. We proposed a new InAsP/InAlGaAs material system with type-I superlattice suitable for a high performance LD for 1.3-micrometer optical subscriber systems. The crystal quality was improved by introducing an InP spacer layer and the RTA process. High characteristic temperature of 143 K was achieved with this material system.

Citation Download Citation

Takayoshi Anan, Mitsuki Yamada, Keiichi Tokutome, and Shigeo Sugou "1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operation", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304441

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available