High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 um

Raymond J. Menna; Dmitri Z. Garbuzov; Hao Lee; Ramon U. Martinelli; S. Yegna Narayan; John C. Connolly

doi:10.1117/12.304450

7 April 1998 High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm

Raymond J. Menna, Dmitri Z. Garbuzov, Hao Lee, Ramon U. Martinelli, S. Yegna Narayan, John C. Connolly

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304450
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We review our recent progress in the design and operation of 2-micrometer InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened- waveguide (BW) design produces internal losses as low as 2 cm^-1, which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-micrometer apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm². Small arrays of similar multi-quantum-well- diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.

Citation Download Citation

Raymond J. Menna, Dmitri Z. Garbuzov, Hao Lee, Ramon U. Martinelli, S. Yegna Narayan, and John C. Connolly "High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304450

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