High-power diode lasers grown by solid-source MBE

Markus Pessa; Marco U. Jalonen; Arto K. Salokatve; Pekka Savolainen; Mika Toivonen; Richard F. Murison; Tullio Panarello; Michael Jansen; Pat Corvini

doi:10.1117/12.304439

7 April 1998 High-power diode lasers grown by solid-source MBE

Markus Pessa, Marco U. Jalonen, Arto K. Salokatve, Pekka Savolainen, Mika Toivonen, Richard F. Murison, Tullio Panarello, Michael Jansen, Pat Corvini

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304439
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

This paper presents the performance characteristics and reliability data of GaInAsP- and AlGaInP-based laser diodes emitting at the wavelengths from 650 to 1,300 nm. The lasers are grown by toxic-gas-free all-solid-source molecular beam epitaxy (SS-MBE).

Citation Download Citation

Markus Pessa, Marco U. Jalonen, Arto K. Salokatve, Pekka Savolainen, Mika Toivonen, Richard F. Murison, Tullio Panarello, Michael Jansen, and Pat Corvini "High-power diode lasers grown by solid-source MBE", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304439

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