Long-wavelength (15.5-um) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells

Olivier Gauthier-Lafaye; Francois H. Julien; Philippe Boucaud; Sebastien Sauvage; Jean-Michel Lourtioz; Veronique Thierry-Mieg; Richard Planel

doi:10.1117/12.304448

7 April 1998 Long-wavelength (15.5-μm) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells

Olivier Gauthier-Lafaye, Francois H. Julien, Philippe Boucaud, Sebastien Sauvage, Jean-Michel Lourtioz, Veronique Thierry-Mieg, Richard Planel

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304448
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A new type of semiconductor unipolar laser operating in the mid-infrared spectral region, the Quantum Fountain intersubband laser, is demonstrated. It is based on optical pumping of a three-bound-state coupled quantum well structure in the GaAs/AlGaAs material system. The lasing transition occurs between the two excited states. Population inversion can be achieved by benefitting from LO-phonon resonance between the two lower subbands. The optical pumping scheme enables a simpler design of the active region than electrically pumped intersubband lasers. Moreover, because doped layers and metallic contacts are not necessary for the operation of the Quantum Fountain laser, free-carrier and plasmon absorptions can be minimised, thus allowing long- wavelength operation. Large optical gains are measured using pump-probe experiments with a free-electron laser. Lasing action under optical pumping by a pulsed CO₂ laser has been achieved at a record long wavelength of 15.5 micrometer with an output peak power of the order of 0.6 W at low temperatures.

Citation Download Citation

Olivier Gauthier-Lafaye, Francois H. Julien, Philippe Boucaud, Sebastien Sauvage, Jean-Michel Lourtioz, Veronique Thierry-Mieg, and Richard Planel "Long-wavelength (15.5-μm) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304448

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available