Modulated-cap thin p-clad antiguided array lasers

Jeong Seok O; Peter S. Zory; Carl F. Miester; John Yoon; Mark A. Emanuel; Verry Sperry; Bradley D. Schwartz; Richard S. Setzko

doi:10.1117/12.304464

7 April 1998 Modulated-cap thin p-clad antiguided array lasers

Jeong Seok O, Peter S. Zory, Carl F. Miester, John Yoon, Mark A. Emanuel, Verry Sperry, Bradley D. Schwartz, Richard S. Setzko

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304464
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Antiguided array lasers were fabricated in thin p-clad, InGaAs/GaAs single quantum well material. The required lateral refractive index variation was achieved by precisely modulating the thickness of the GaAs cap layer using a novel pulsed anodization/etching technique. Edge emitting arrays have 5 lasers on 9.5 micrometer centers with 6 micrometer wide gain regions and arrays having 20 lasers on 7 micrometer centers with 5 micrometer wide gain regions were characterized. At 1.2 times the pulsed current threshold (I_th), the central lobe of the lateral far field of the 5 element arrays contained about 55% of the beam power and were nearly diffraction limited (FWHM equals 1.3 degrees). At 1.2 I_th, the central lobe of the 20 element arrays contained about 75% of the beam power and were about twice the diffraction limit (FWHM) equals 0.8 degrees). At 10 I_th, the central lobe of the 20 element arrays contained about 60% of the beam power and were about 1.6 degrees wide.

Citation Download Citation

Jeong Seok O, Peter S. Zory, Carl F. Miester, John Yoon, Mark A. Emanuel, Verry Sperry, Bradley D. Schwartz, and Richard S. Setzko "Modulated-cap thin p-clad antiguided array lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304464

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