Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors

Hooman Mohseni; Erick J. Michel; Manijeh Razeghi; W. C. Mitchel; Gail J. Brown

doi:10.1117/12.304497

8 April 1998 Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors

Hooman Mohseni, Erick J. Michel, Manijeh Razeghi, W. C. Mitchel, Gail J. Brown

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304497
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi- insulating GaAs substrate for long wavelength IR detectors. Photoconductive detectors fabricated from the superlattices showed 80 percent cut-off at 11.6 micrometers and peak responsivity of 6.5 V/W with Johnson noise limited detectivity of 2.36 X 10⁹ cmHz^1/2/W at 10.7 micrometers at 78 K. The responsivity decreases at higher temperatures with a T_-2 behavior rather than exponential decay, and at room temperature the responsivity is about 660 mV/W at 11 micrometers . Lower Auger recombination rate in this system provides comparable detectivity to the best HgCdTe detectors at 300K. Higher uniformity over large areas, simpler growth and the possibility of having read-out circuits in the same GaAs chip are the advantages of this system over HgCdTe detectors for near room temperature operation.

Citation Download Citation

Hooman Mohseni, Erick J. Michel, Manijeh Razeghi, W. C. Mitchel, and Gail J. Brown "Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304497

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