RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition

Yoshiyuki Hirano; Fumio Sato; Ahalapitiya Hewage Jayatissa; Hiroshi Ohtake; Kuniharu Takizawa

doi:10.1117/12.304500

8 April 1998 RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition

Yoshiyuki Hirano, Fumio Sato, Ahalapitiya Hewage Jayatissa, Hiroshi Ohtake, Kuniharu Takizawa

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304500
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The effects of rf-bias to the substrate on the defects of hydrogenated amorphous silicon deposited by electron cyclotron resonance - plasma enhanced chemical vapor deposition were investigate.d Measurements by constant photo-current method showed that the defect density decreased as the rf-power increased. The decrease of the defect density by rf-bias did not depend on the microwave power so much. Deposition rate did not depend on the rf- power, whereas it increased with the increase of the microwave power. Photoconductivity was shown to increase with rf-power corresponding to the decrease of the defect density. Surface roughness measurements indicated that the surface flatness was increased by rf-bias voltage independently of the deposition temperature. It was considered that these elimination of defects was induced by the increase of the number of mobile particles on the surface due to rf-bias.

Citation Download Citation

Yoshiyuki Hirano, Fumio Sato, Ahalapitiya Hewage Jayatissa, Hiroshi Ohtake, and Kuniharu Takizawa "RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304500

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