GaAs-on-Si MSM photodetector: FET receiver characterization and reliability

Ting Feng; Athanasios Dimoulas; Aristos Christou

doi:10.1117/12.307589

5 May 1998 GaAs-on-Si MSM photodetector: FET receiver characterization and reliability

Ting Feng, Athanasios Dimoulas, Aristos Christou

Proceedings Volume 3288, Optoelectronic Interconnects V; (1998) https://doi.org/10.1117/12.307589
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Planar monolithically integrated GaAs-on-silicon photoreceivers consisting of a metal-semiconductor-metal (MSM) photodiode and GaAs metal-semiconductor field-effect transistor have been fabricated. The performance of GaAs on Si MSM photodetectors has been characterized and the dark current was measured and compared to the conventional p-i-n photodiodes. The investigated GaAs on Si photoreceivers were subjected to thermal accelerated stress testing up to 200 degree(s)C and duration of 1000 hours, in order to study their thermal stability. A failure mode has been determined to consist of an increase of dark current and a decrease of photocurrent as a function of aging time. The degradation mechanism is shown to be the interdiffusion in the Au/GaAs interfaces and the degradation of the photosensitive surfaces after temperature stress testing.

Citation Download Citation

Ting Feng, Athanasios Dimoulas, and Aristos Christou "GaAs-on-Si MSM photodetector: FET receiver characterization and reliability", Proc. SPIE 3288, Optoelectronic Interconnects V, (5 May 1998); https://doi.org/10.1117/12.307589

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