Paper
20 April 1998 Optical concentrators for light-emitting diodes
Tim Ashley, David T. Dutton, Charles Thomas Elliott, Neil T. Gordon, T. J. Phillips
Author Affiliations +
Abstract
The incorporation of non-imaging optical concentrations in uncooled mid-IR LEDs is described. Novel micromachining methods are used to produce optical concentrators in the growth substrate of epitaxial InSb/InAlSb heterostructures. Resultant large area LED arrays, displaying both positive and negative luminescence, are shown to have optical gains of 3.5 over conventional mesas made form the same material. The LED technology shown also relies on the micromachined substrate being transparent to 3-5 micrometers radiation and to act as a low resistance common contact. The use of degenerate doping in InSb is described, resulting in a shift in the room-temperature transmission to the 3-5micrometers atmospheric window and providing high electrical conductivities.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim Ashley, David T. Dutton, Charles Thomas Elliott, Neil T. Gordon, and T. J. Phillips "Optical concentrators for light-emitting diodes", Proc. SPIE 3289, Micro-Optics Integration and Assemblies, (20 April 1998); https://doi.org/10.1117/12.305488
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Solar concentrators

Etching

Light emitting diodes

Semiconductors

Calibration

Doping

Luminescence

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