Critical-dimension atomic force microscope (CD-AFM) measurement of masks

Sylvain Muckenhirn; A. Meyyappan

doi:10.1117/12.308778

8 June 1998 Critical-dimension atomic force microscope (CD-AFM) measurement of masks

Sylvain Muckenhirn, A. Meyyappan

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308778
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Ever-smaller dimensions and more complex circuits demand ever more accurate and precise characterization of mask geometry. Feature must be characterized non-destructively for attributes that include width, undercut, centering, shorting, rounding, optical proximity correction (OPC) and seriff formation. Once characterized, the transfer function of these mask features to wafer features must be determined. The CD-AFM is a uniquely powerful tool for performing these measurements on masks and wafers. It is non-destructive and provides data unobtainable with standard AFMs or electron microscopes. Unlike standard AFMs, it quantitatively profiles lines and trenches in three dimensions. It does not require any of the tedious and time- consuming sample preparation required by cross-sectional TEM or SEM. Another advantage of the CD-AFM is that the samples need not be cleaved and profiles can conveniently be measured anywhere on the wafer and in any order. CD-AFM is used to characterize the mask and techniques for setting the lithographic process are developed. The CD-AFM is calibrated, which includes the characterization of CD-AFM tip-geometry. The effect of tip-geometry on measurement-precision and accuracy are analyzed. Measurement throughput is explored including the benefits of automated data acquisition and analysis.

Citation Download Citation

Sylvain Muckenhirn and A. Meyyappan "Critical-dimension atomic force microscope (CD-AFM) measurement of masks", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308778

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