Improved positive surface modification resist process for 193-nm lithography

Masayuki Endo; Takahiro Matsuo; Shigeyasu Mori; Taku Morisawa; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka

doi:10.1117/12.312439

29 June 1998 Improved positive surface modification resist process for 193-nm lithography

Masayuki Endo, Takahiro Matsuo, Shigeyasu Mori, Taku Morisawa, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312439
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

With increase in density of semiconductor devices, 193 nm lithography is promising to attain smaller feature size patterns. Surface imaging process is useful for this lithography in terms of large depth of focus and prevention from substrate reflection. As the surface imaging process, so far we developed positive surface modification resist process using CVD for various device patterns' fabrication. To solve the issues of selective polysiloxane layer formation and sensitivity, we have improved this positive surface modification resist process using a new polymer, poly(cyclohexyl p-styrenesulfonate-co-methyl methacrylate), and a new photobase generator, O-phenylacetyl acetonaphthone oxime. 0.15 micrometers pattern was successfully fabricated using the new process with improved sensitivity of 80 mJ/cm².

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Masayuki Endo, Takahiro Matsuo, Shigeyasu Mori, Taku Morisawa, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, and Masahiro Tsunooka "Improved positive surface modification resist process for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312439

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