Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-um geometries

Will Conley; Carl P. Babcock; John A. Lilygren; Clifford P. Sandstrom; Nigel R. Farrar; John Piatt; Devon A. Kinkead; William Goodwin; Oleg P. Kishkovich; John K. Higley; Phil Cate

doi:10.1117/12.312479

29 June 1998 Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-μm geometries

Will Conley, Carl P. Babcock, John A. Lilygren, Clifford P. Sandstrom, Nigel R. Farrar, John Piatt, Devon A. Kinkead, William Goodwin, Oleg P. Kishkovich, John K. Higley, Phil Cate

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312479
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

One such issue is the quantitative control of critical dimension (CD) and how to calibrate fab contamination levels to linewidth control. Since most fabs build several generations of devices, contamination levels for older generations may not be suitable for new generations. Therefore, studies to control CD for each generation are required to determine the effectiveness of filtration schemes. In this paper the authors have investigated CD control for imaging dimensions from 0.25 micrometers to 0.15 micrometers . We have also correlated this data back to chemical monitoring levels to determine CD vs. PED stability for these geometry's to determine the contamination level tolerance. Additionally, the authors have generated process windows to determine the effect such delays have on process windows.

Citation Download Citation

Will Conley, Carl P. Babcock, John A. Lilygren, Clifford P. Sandstrom, Nigel R. Farrar, John Piatt, Devon A. Kinkead, William Goodwin, Oleg P. Kishkovich, John K. Higley, and Phil Cate "Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-μm geometries", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312479

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available