Paper
13 July 1998 Large-area infrared microemitter arrays for dynamic scene projection
Barry E. Cole, Robert E. Higashi, Jeff A. Ridley, J. Holmen, Robert G. Stockbridge, Robert Lee Murrer Jr., Eddie Burroughs Jr.
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Abstract
Resistive emitter arrays are formed via the fabrication of microemitters on Si CMOS electronics. These IR emitter arrays using microstructures have been developed at Honeywell to project scenes for a wide range of applications. A new array which has been fabricated has a size of 544 X 672 pixels. Other arrays producing very high apparent temperatures in excess of 700 K have also been fabricated. Arrays have been fabricated for projecting low background scenes achieved through cryogenic operation. All arrays are designed to project IR radiation over the full MWIR and LWIR spectral bands. Individual arrays and their emission properties will be described. Array properties at different substrate temperatures will be described. Advances in packaging of these different array types will also be discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barry E. Cole, Robert E. Higashi, Jeff A. Ridley, J. Holmen, Robert G. Stockbridge, Robert Lee Murrer Jr., and Eddie Burroughs Jr. "Large-area infrared microemitter arrays for dynamic scene projection", Proc. SPIE 3368, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing III, (13 July 1998); https://doi.org/10.1117/12.316356
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Cited by 12 scholarly publications.
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KEYWORDS
Temperature metrology

Resistance

Field effect transistors

Resistors

Projection systems

Semiconducting wafers

Cryogenics

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