Paper
8 October 1998 Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-μm InGaAsP semiconductor laser diodes
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Proceedings Volume 3415, Laser Diodes and Applications III; (1998) https://doi.org/10.1117/12.326639
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada
Abstract
In this study, different second harmonic distortion (2HD) levels of a 1.55 micrometers , InGaAsP ridge waveguide laser diode are investigated by using a mathematical model based on multi-mode rate equations. The rate equations with an input current i are solved numerically by using fourth order Runge-Kutta algorithm for frequencies ranging from 1 GHz to 10 GHz with 1 GHz steps and the standard parameter values. The important parameters of 1.55 micrometers . InGaAsP semiconductor lasers such as Auger recombination, non- radiative recombination, spontaneous emission lifetime and gain saturation are taken into account. The effects of some parameters on 2HD for different threshold levels are examined and computed graphically.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fatih V. Celebi, M. Sadettin Ozyazici, and Kenan Danisman "Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-μm InGaAsP semiconductor laser diodes", Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); https://doi.org/10.1117/12.326639
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