Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD

Jie Wang; Satoru Tottori; Maosheng Hao; Hisao Sato; Shiro Sakai; Marek Osinski

doi:10.1117/12.311000

22 June 1998 Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD

Jie Wang, Satoru Tottori, Maosheng Hao, Hisao Sato, Shiro Sakai, Marek Osinski

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341902 (1998) https://doi.org/10.1117/12.311000
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Selective overgrowth method has been sued to grow GaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) and sublimation technology. MgO, Si and SiO₂ which have different thermal conductivities and thermal expansion coefficients, have been chosen as mask materials. The microstructure and selectively grown GaN and the lateral growth mechanisms of sublimation and MOCVD have also ben investigated by transmission electron microscopy and scanning electron microscopy. The effect of different mask materials on reduction of dislocation density is discussed. The experimental results indicate that Si is the best mask material for GaN lateral overgrowth. The dislocation density is about 10⁹ cm^-2 above the window areas, and it is reduced to 10⁶ cm^-2 in the lateral overgrowth region above the Si mask.

Citation Download Citation

Jie Wang, Satoru Tottori, Maosheng Hao, Hisao Sato, Shiro Sakai, and Marek Osinski "Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341902 (22 June 1998); https://doi.org/10.1117/12.311000

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