Paper
26 October 1998 HgCdTe-based quantum device nanofabrication
C. H. Lee, Jung B. Choi, J. S. Yook, S. J. Lee, K. W. Park, Soo Ho Bae, Hee Chul Lee, Choong-Ki Kim, Tae Won Kang, Jin-Ki Hong, Sun-Ung Kim, Mann-Jang Park
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Abstract
We have made nanoscale fabrication for HgCdTe-based Coulomb blockade type quantum devices. Using e-beam lithography and lift-off technique with ZEP resist, multi-lines with 0.1/0.3 nm width and space were nano-patterned on ZnS/HgCdTe surface. SEM and AFM images for the lines display well-splitted patterning result with a little roughing ZnS surface. Split- gate of 200 nm radius was also fabricated on ZnS/MCT for defining nanosize quantum dot. All the work will provide a fundamental basis for the nanofabrication process of HgCdTe- based narrow-gap quantum devices.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. H. Lee, Jung B. Choi, J. S. Yook, S. J. Lee, K. W. Park, Soo Ho Bae, Hee Chul Lee, Choong-Ki Kim, Tae Won Kang, Jin-Ki Hong, Sun-Ung Kim, and Mann-Jang Park "HgCdTe-based quantum device nanofabrication", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328073
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KEYWORDS
Electron beam lithography

Nanofabrication

Quantum dots

Zinc

Electrons

Nanolithography

Scanning electron microscopy

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