Paper
18 November 1998 Influence of ion implantation on the reflectance spectrum of HgCdTe
Xiangyang Li, JianHua Zhao, Wenjuan Zhu, Runqing Jiang, Yueyuan Xia, Xiaoning Hu, Jun Zhao, Huiqin Lu, Xinwen Hu, Jiaxiong Fang
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Abstract
An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangyang Li, JianHua Zhao, Wenjuan Zhu, Runqing Jiang, Yueyuan Xia, Xiaoning Hu, Jun Zhao, Huiqin Lu, Xinwen Hu, and Jiaxiong Fang "Influence of ion implantation on the reflectance spectrum of HgCdTe", Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); https://doi.org/10.1117/12.331317
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KEYWORDS
Reflectivity

Ions

Mercury cadmium telluride

Ion implantation

Refractive index

Infrared radiation

Oxidation

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