Paper
10 November 1998 Characterization of a VPE gallium arsenide x-gamma-ray detector
Giuseppe Bertuccio, D. Maiocchi, C. Rente, Arno Foerster, Hans Luth
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Abstract
An x-(gamma) ray detector constituted by a 1 mm2 Schottky junction on Vapor Phase Epitaxy gallium arsenide is presented. The junction has been characterized by means of capacitance and current vs. voltage analyses, finding a good agreement with the theory. Thanks to the low impurity concentration of the undoped epitaxial layer, an active region depth of 20 micrometers is reached at 100 V bias voltage. A reverse current density of 18 nA/cm2 has been measured at 290 K in operating condition. The detector has been tested at room temperature with a 241Am X-(gamma) source; the pulser line shows 1.41 keV FWHM and the 59.54 keV line shows 1.47 keV FWHM, corresponding to an energy resolution of 2.5 percent.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giuseppe Bertuccio, D. Maiocchi, C. Rente, Arno Foerster, and Hans Luth "Characterization of a VPE gallium arsenide x-gamma-ray detector", Proc. SPIE 3445, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, (10 November 1998); https://doi.org/10.1117/12.330324
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Gallium arsenide

Silicon

Capacitance

Electric field sensors

Diodes

Information operations

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