Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

Homer Antoniadis; Carsten Giebeler; Donal D. C. Bradley; Yasuhiko Shirota

doi:10.1117/12.332607

16 December 1998 Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

Homer Antoniadis, Carsten Giebeler, Donal D. C. Bradley, Yasuhiko Shirota

Author Affiliations +

Proceedings Volume 3476, Organic Light-Emitting Materials and Devices II; (1998) https://doi.org/10.1117/12.332607
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4',4''-tris[N,-(3- methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge- limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1 by 10⁵ V/cm. Our observations clarify the role of m-MTDATA as a voltage- lowering hole-injecting buffer layer in organic light- emitting diodes.

Citation Download Citation

Homer Antoniadis, Carsten Giebeler, Donal D. C. Bradley, and Yasuhiko Shirota "Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes", Proc. SPIE 3476, Organic Light-Emitting Materials and Devices II, (16 December 1998); https://doi.org/10.1117/12.332607

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